digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fjt1100, FJT1101 ultra low leakage diodes i r = 1.0 pa (max) @ 5v (fjt1100) bv = 20 v (min) (FJT1101) maximum ratings characteristics value storage temperature range -55 to +200c maximum junction operating temperature +175c lead temperature +260c power dissipation maximum total power dissipation at 25c ambient linear power derating factor (from 25c) 250 mw 1.67 mw/c working inverse voltage fjt1100 FJT1101 25v 15v continuous forward current 150 ma electrical characteristics (25c ambien t temperature unless otherwise noted) symbol characteristics min max units test conditions bv breakdown voltage fjt1100 FJT1101 30 20 v i r = 5.0a i r reverse current fjt1100 FJT1101 1.0 10 5.0 15 pa v r = 5.0v v r = 15v v r = 5.0v v r = 15v v f forward voltage fjt1100 FJT1101 1.05 1.10 v i f = 50ma c capacitance fjt1100 FJT1101 1.5 1.8 pf v r = 0, f = 1mhz mechanical characteristics case do-35 marking body painted, alpha-numeric polarity cathode band available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121214
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